Physics of Microfabrication: Front End Processing, Fall 2004
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- Author:
- Hoyt, Judy
- Subject:
- Science and Technology
- Institution Name:
- M.I.T.
- Collection:
- MIT OpenCourseWare
- Grade Level:
- Post-secondary
- Abstract:
Fundamental principles of the processes used in the fabrication of silicon monolithic integrated circuits. Physical models of bulk crystal growth, thermal oxidation, solid-state diffusion, ion implantation, epitaxial deposition, chemical vapor deposition, and physical vapor deposition. Refractory metal silicides, plasma and reactive ion etching, and rapid thermal processing. Process modeling and simulation. Technological limitations on integrated circuit design and fabrication. VLSI fundamentals.
- Languages:
- English
- Material Type:
- Activities and Labs, Audio Lectures, Full Course, Homework and Assignments, Lecture Notes, Syllabi
- Media Format:
- Audio, Text/HTML, Downloadable docs
- Conditions of Use:
-
Creative Commons Attribution-Noncommercial-Share Alike 3.0
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