Physics of Microfabrication: Front End Processing, Fall 2004

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Author:
Subject:
Science and Technology
Institution Name:
M.I.T.
Collection:
MIT OpenCourseWare
Grade Level:
Post-secondary
Abstract:

Fundamental principles of the processes used in the fabrication of silicon monolithic integrated circuits. Physical models of bulk crystal growth, thermal oxidation, solid-state diffusion, ion implantation, epitaxial deposition, chemical vapor deposition, and physical vapor deposition. Refractory metal silicides, plasma and reactive ion etching, and rapid thermal processing. Process modeling and simulation. Technological limitations on integrated circuit design and fabrication. VLSI fundamentals.

Languages:
English
Material Type:
Activities and Labs, Audio Lectures, Full Course, Homework and Assignments, Lecture Notes, Syllabi
Media Format:
Audio, Text/HTML, Downloadable docs
Conditions of Use:
Creative Commons Attribution-Noncommercial-Share Alike 3.0
Creative Commons Attribution-Noncommercial-Share Alike 3.0

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