This course will focus for a large part on MOSFET and CMOS, but also on heterojunction BJT, and photonic devices.

The purpose of this project is to develop a method for monitoring, evaluating the status of a tumor undergoing radiation treatment and transmit the radiation dose received by the tumor in real-time to an external data acquisition unit and evaluate the treatment strategy. The target system to be designed would consist of a miniature wireless sensor module which would be implanted in the region of interest and this unit transmits the data to an external receiver wirelessly. The Modern fabrication process allows us to fabricate CMOS circuits in nanometer range which is highly desirable when used in radiation sensing scheme where size is the main constraint. The heart of the sensing system is a MOS transistor device. The electrical properties of the MOS device (drain to source resistance, threshold voltage) change when exposed to gamma radiation. The objective of this project is to evaluate the MOS transistor parameters change with radiation dose, study the effects with varying transistor widths, lengths and propose the ideal characteristics of the CMOS device. The scheme of the radiation measurement is presented. Some of the questions that will be addressed in this report are – The effect of radiation on channel resistance during and after radiation, temperature dependency of the radiation effects. The complete characterization of the sensor is performed and the results are produced and cross checked with device physics. The characterized CMOS transistor is exposed to radiation and the radiation dosage received by the transistor is sent to a RFID receiver using radio frequency communication. The signal at the RFID receiver is filtered and the actual radiation dosage was determined from the filtered output’s duty cycle. A novel approach is used in determining the radiation measurement in this study.

This collection of homeworks is used in ECE 255 "Introduction to Electronic Analysis and Design" (Purdue University). Students do their work, or sometimes check their work, by using the Spice 3F4 simulator on nanoHUB.org.

Introduction to MOSFET, a device called Metal-Oxide-Semiconductor Field Effect Transistor.

Introduction to MOSFET, a device called Metal-Oxide-Semiconductor Field Effect Transistor.

" 6.012 is the header course for the department's "Devices, Circuits and Systems" concentration. The topics covered include modeling of microelectronic devices, basic microelectronic circuit analysis and design, physical electronics of semiconductor junction and MOS devices, relation of electrical behavior to internal physical processes, development of circuit models, and understanding the uses and limitations of various models. The course uses incremental and large-signal techniques to analyze and design bipolar and field effect transistor circuits, with examples chosen from digital circuits, single-ended and differential linear amplifiers, and other integrated circuits."

" 6.012 is the header course for the department's "Devices, Circuits and Systems" concentration. The topics covered include: modeling of microelectronic devices, basic microelectronic circuit analysis and design, physical electronics of semiconductor junction and metal-on-silicon (MOS) devices, relation of electrical behavior to internal physical processes, development of circuit models, and understanding the uses and limitations of various models. The course uses incremental and large-signal techniques to analyze and design bipolar and field effect transistor circuits, with examples chosen from digital circuits, single-ended and differential linear amplifiers, and other integrated circuits."

This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies.