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Physics of Microfabrication: Front End Processing, Fall 2004

(Complete Item Description)

Abstract:: Fundamental principles of the processes used in the fabrication of silicon monolithic integrated circuits. Physical models of bulk crystal growth, thermal oxidation, solid-state diffusion, ion implantation, epitaxial deposition, chemical vapor deposition, and physical vapor deposition. Refractory metal silicides, plasma and reactive ion etching, and rapid thermal processing. Process modeling and simulation. Technological limitations on integrated circuit design and fabrication. VLSI fundamentals.

Subject:: Science and Technology
Grade Level:: Post-secondary
Collection:: MIT OpenCourseWare

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Top Keywords

Bulk Crystal Growth Chemical Vapor Deposition Computer Sciences Device Operation Electrical Engineering Epitaxial Deposition Fabrication Processes Integrated Circuit Design Integrated Circuit Fabrication Integrated Circuits Ion Implantation Monolithic Integrated Circuits Physical Models Physical Vapor Deposition Plasma and Reactive Ion Etching Process Modeling Process Simulation Rapid Thermal Processing Refractory Metal Silicides Sige Materials Silicon Solid-State Diffusion Technological Limitations Thermal Oxidation

Conditions of Use

No Strings Attached
Remix and Share
Share Only
Read the Fine Print

No restrictions on your remixing, redistributing, or making derivative works. Give credit to the author, as required.

Your remixing, redistributing, or making derivatives works comes with some restrictions, including how it is shared.

Your redistributing comes with some restrictions. Do not remix or make derivative works.

Copyrighted materials, available under Fair Use and the TEACH Act for US-based educators, or other custom arrangements. Go to the resource provider to see their individual restrictions.

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