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(Complete Item Description)
- Abstract:
Fundamental principles of the processes used in the fabrication of silicon monolithic integrated circuits. Physical models of bulk crystal growth, thermal oxidation, solid-state diffusion, ion implantation, epitaxial deposition, chemical vapor deposition, and physical vapor deposition. Refractory metal silicides, plasma and reactive ion etching, and rapid thermal processing. Process modeling and simulation. Technological limitations on integrated circuit design and fabrication. VLSI fundamentals.
- Subject:
- Science and Technology
- Grade Level:
- Post-secondary
- Collection:
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MIT OpenCourseWare
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